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Datasheet

• Easily fits or retrofits almost any mounting configuration

• Exceptional optical performance in a compact right-angle housing

• 20 to 140 V ac/dc or 20 to 270 V ac/dc operation with P-MOSFET or N-MOSFET output,

depending on model (see Specifications)

• Bright LED operating status indicators, visible from 360°

• Rugged, sealed housing, protected circuitry, 1200 PSI washdown

• Versatile mounting: front- and base-mount (M18), side-mount, and retrofit brackets

WARNING: Not To Be Used for Personnel Protection

Never use this device as a sensing device for personnel

protection. Doing so could lead to serious injury or death. This

device does not include the self-checking redundant circuitry necessary to

allow its use in personnel safety applications. A sensor failure or

malfunction can cause either an energized or de-energized sensor output

condition.

Model Sensing Mode / LED Sensing Range Output Type

QS18WE

940 nm Infrared

Effective Beam: 10 mm (0.4

in)

OPPOSED

20 m (66 ft)

N/A (Emitter)

QS18ANWR L.O.

N-MOSFET (Sinking)

QS18RNWR D.O.

QS18APWR L.O.

P-MOSFET (Sourcing)

QS18RPWR D.O.

QS18ANWLP

660 nm Visible Red

POLAR RETRO

3.5 m (12 ft)

L.O.

N-MOSFET (Sinking)

QS18RNWLP D.O.

QS18APWLP L.O.

P-MOSFET (Sourcing)

QS18RPWLP D.O.

QS18ANWLV

660 nm Visible Red

RETRO

6.5 m (21 ft)

L.O.

N-MOSFET (Sinking)

QS18RNWLV D.O.

QS18APWLV L.O.

P-MOSFET (Sourcing)

QS18RPWLV D.O.

QS18ANWDL

624 nm Visible Red

DIFFUSE

450 mm (18 in)

L.O.

N-MOSFET (Sinking)

QS18RNWDL D.O.

QS18APWDL L.O.

P-MOSFET (Sourcing)

QS18RPWDL D.O.

QS18ANWDXL

850 nm Infrared

DIFFUSE

1 m (39 in)

L.O.

N-MOSFET (Sinking)

QS18RNWDXL D.O.

QS18APWDXL L.O.

P-MOSFET (Sourcing)

QS18RPWDXL D.O.

Standard 2 m (6.5 ft) cable models are listed. To order the 9 m (30 ft) cable model, add suffix "W/30" to the cabled model

number. (e.g., QS18WE W/30) QD models: To order models with a 150 mm (6 in) pigtail cable with 4-pin AC Micro-style

QD, add suffix “Q2” to the model number (e.g., QS18WEQ2). A model with a QD connector requires an accessory mating

cordset. 600 V cable models: Standard models are supplied with 300 V cable. For 600 V cable, add suffix “C1” to the

model number (e.g., QS18WEC1).

MOSFET: Metal oxide semiconductor field-effect transistor.

WORLD-BEAM

QS18 Universal Voltage

Sensors

Original Document

136003 Rev. D

27 February 2014

136003

1 2 3 4 5 6 7

Summary of Contents

Page 1 - QS18 Universal Voltage

Datasheet• Easily fits or retrofits almost any mounting configuration• Exceptional optical performance in a compact right-angle housing• 20 to 140 V a

Page 2 - Indicators

SpecificationsSupply VoltageP-MOSFET Models: 20 to 140 V ac/dc at less than 10 mA, exclusive ofloadN-MOSFET Models: 20 to 270 V ac/dc at less than 10

Page 3 - Performance Curves

Dimensions79.9 mm3.15"14.5 mm0.57"10.2 mm0.40"36 mm1.42"24.1 mm0.95"5.2 mm0.20"3.8 mm0.15"80.5 mm3.17"17.3 mm0

Page 4 - EXCESS GAIN

Polarized RetroreflectiveExcess Gain Beam Pattern1101000.1 m0.33 ft1 m3.3 ft10 m33 ft0.01 m0.03 ft1000DISTANCEEXCESS GAINQS18...LPRetroreflective Mode

Page 5 - Wiring Diagrams

Diffuse (performance based on 90% performance white test card)Excess Gain Beam PatternDISTANCEQS18A..WDXL1101001000EXCESS GAIN1 mm0.04"10 mm0.4&q

Page 6 - Accessories

Accessories4-Pin Micro-Style CordsetsModel Length Style Dimensions PinoutMQAC-406 1.83 m (6 ft)Straight42 Typ.ø 14.51/2-20 UNF-2841231 = Red/Black2 =

Page 7 - Apertures

AperturesModel Description PiecesCircular APQS18-020 0.5 mm dia. 6APQS18-040 1.0 mm dia.APQS18-100 2.5 mm dia.Horizontal SlotAPQS18-020H 0.5 x 6.4 m

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